Evaluation of SMT bipolar phototransistors response as detectors in megavoltage photon beams generated by a linear accelerator

Authors

  • J. O. da Silva Departamento de Energia Nuclear, Universidade Federal de Pernambuco e Laboratório de Instrumentação Nuclear, CRCN/CNEN
  • C. M. S. de Magalhães Departamento de Energia Nuclear, Universidade Federal de Pernambuco e Laboratório de Instrumentação Nuclear, CRCN/CNEN
  • J. A. Filho Departamento de Energia Nuclear, Universidade Federal de Pernambuco
  • L. A. P. dos Santos Laboratório de Instrumentação Nuclear, CRCN/CNEN
  • W. M. Santos Hospital Governador João Alves Filho

Keywords:

phototransistor, dosimetry, radiotherapy.

Abstract

Commercial bipolar phototransistors have been used as detectors for low energy X-rays. However, when they are used in high energy X-ray beams, there is a certain loss of sensitivity to the ionizing radiation. This damage is cumulative and irreversible. There are several factors that yield variations in the phototransistor response when it is under high energy radiation, such as its fabrication technology and its electrical characteristics. The aim of this work is to present experimental results that are used to correlate the response curve of SMT (Surface-Mount Technology) bipolar phototransistors with their loss of sensitivity after irradiation from a Linac (linear accelerator) megavoltage beams.

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How to Cite

da Silva, J. O., de Magalhães, C. M. S., A. Filho, J., dos Santos, L. A. P., & Santos, W. M. (2011). Evaluation of SMT bipolar phototransistors response as detectors in megavoltage photon beams generated by a linear accelerator. Scientia Plena, 3(7). Retrieved from https://scientiaplena.emnuvens.com.br/sp/article/view/661

Issue

Vol. 3 No. 7 (2007): November/Novembro 2007

Section

Articles

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